PDF | La solution solide Ga1-xInxAs ySb1-y a été cristallisée par la technique d’ épitaxie en phase liquide sur substrat GaSb orienté () et ()B dans la. Procédé d’épitaxie dans lequel le corps à partir duquel est formée la couche épitaxiale est amené à l’état liquide en contact avec le substrat à épitaxier. Resume: Un diagramme de phase precis dans la region riche en indium du systeme ternaire Ga-In-Sb a ete etabli. Les points du liquidus ont ete obtenus par .

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The process consists in first growing a graphene layers film on the Epitaxue of 4H-SiC by confinement-controlled sublimation of silicon carbide.

Epitaxial growth of gold on mica in an ultra-high vacuum H. In both cases, epitaxial In2O3 films having the bixbyite phase were grown with various orientation relationships, depending upon the substrate symmetry and gas ambient.

The core is a zinc blende monocrystal surrounded with single-crystal hexagonal wurtzite.

The kinetics is characterized by using a specially-dedicated furnace and by considering laser annealing. Effects of substrate and ambient gas on epitaxial growth indium oxide thin films. This constraint is a difficulty to circumvent as these faces are not present in the standard equilibrium morphology. Toward a complete description of nucleation and growth in liquid-liquid phase separation. We demonstrated this process with the ferroelectric crystal KTiOPO4 which is one of the most promising candidate materials for that purpose.

Stoichiometric In2O3 films are formed in oxygen, while oxygen deficient In2O2. By using a high temperature solution method, the so-called “flux method”, and by choosing an appropriate chemical composition of the flux solution, we obtained periodically domain-structured KTP layers with thicknesses up to mu m and regular periodicity onto and over bar faces of the initial PPKTP seeds.


Homogeneity and other layer characteristics were examined. The successive stages of growth of the nucleated droplets are a diffusion-driven free growth, an intermediate regime and a coarsening by reduction of interface. These data, added to the literature results, have permitted to get a quite complete view of the growth scenario in very off-critical phase-separating liquids.

Diagramme de phases et croissance par epitaxie en phase liquide du gaxin1-xsb

Pgase growth of gold on mica in an ultra-high vacuum. Paris 22, The first process allows to produce films of silicon on sapphire and films of silicon on glass by considering a laser annealing.

It is then necessary to find the growth conditions enabling to work below the roughening temperature of these faces. Here we develop a general approach by adapting the seed-mediated solution phase ne of nanocrystals in order to directly grow them on crystalline thin films.

Metrics Show article metrics. Nanoselective area growth of gan by metalorganic vapor phase epitaxy on 4h-sic using epitaxial graphene as a mask.

Les points du solidus resultent de la mesure de la concentration en gallium de liqiide ternaires epitaxies a partir de liquides riches en indium. The sublimated phasw are condensed on mica substrate at 1C.

Liquidus isotherms and solidus lines were calculated using a regular solution model. The language you choose must correspond to the language of the term you have entered. Amorphous, polycrystalline or epitaxial gallium oxide films can be obtained depending upon the oxygen pressure during the growth in the C temperature range.

Diagramme de phases et croissance par epitaxie en phase liquide du gaxin1-xsb

This approach of solution epitaxial growth combines the advantages of chemistry in solution in producing shape-controlled and monodisperse metallic nanocrystals, and of seeded growth on an ad hoc metallic film that efficiently controls orientation through epitaxy. The differences in film texture were correlated to the differences in growth conditions, while the differences in the film properties were correlated to the film oxygen composition.


The corresponding epitaxial relationships were determined and interpreted in the frame of the domain matching epitaxy. A collection of writing tools that cover the many facets of English and French grammar, style and usage. En ajustant certains parametres thermodynamiques, l’accord obtenu avec les points experimentaux est excellent cote indium du diagramme ternaire. By fitting some thermodynamical parameters, good agreement with experimental points were obtained.

The liquidus data were obtained from DTA measurements on samples of predetermined composition. Un diagramme de phase precis dans la region riche en indium du systeme ternaire Ga-In-Sb a ete etabli. Additionally, the model proposes an explanation for the properties of the obtained films as a function of the lliquide conditions, based on optical microscope and AFM observations and bonding energy characterization.

The effects of ambient gas and substrate symmetry on the growth of indium oxide thin films were studied. On the other hand, using films presenting 4-fold symmetry surfaces such as Pt and Cuthe Co growth leads to phaze wires in discrete directions.

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Using a Co precursor, single-crystalline Co nanowires are directly grown on metallic films and present different spatial orientations depending on the crystalline symmetry of the film used as a 2D seed for Pgase nucleation. The phase separation mechanism of a binary liquid mixture off-critically quenched in its miscibility gap is nucleation and growth, its homogeneous phase reaching a metastable equilibrium state.

Chemical methods offer the possibility to synthesize a large panel of nanostructures of various materials with promising properties.